Impact of Drive Strength and Well-contact Density on Heavy-ion-induced Single Event Transient
نویسندگان
چکیده
We measure distributions of heavy-ioninduced Single Event Transient (SET) pulse widths from the 4 kinds of inverter chains to measure their characteristics and estimate SET-induced soft error rates on a Flip-Flop (FF) and a delayed TMR FF. Test chip was fabricated in 65-nm bulk CMOS process and measurement results show that maximum SETinduced soft error rate on a FF is equivalent to 20% of Single Event Upset (SEU) rate. On the delayed TMR with 400ps delay element, SET-induced soft error rate can be reduced from 2 × 10−10 cm/inv to less than 2 ×10−11 cm/inv by using 4x inverters with 2μm wellcontact distance.
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